Vacancies and Dominant Electrically Active Defects in Bulk Semi-Insulating GaAs

Optical Properties of As-Antisite and EL 2 Defects in GaAs

This Letter reports the first application of an ESR-tagged magnetic circular dichroism measurement to a paramagnetic deep-level defect in a semiconductor. In semi-insulating GaAs two new absorption bands are found at 1.05 and 1.29 eV. Both bands are identified as intracenter electronic transitions of the As-antisite defect. The analysis of the absorption and concentration data implies that the ...

Electron emission from deep level defects EL2 and EL6 in semi- insulating GaAs observed by positron drift velocity transient measurements

Determination of the charge carrier compensation mechanism in Te-doped GaAs by scanning tunneling microscopy

We identified the charge carrier compensation mechanism in Te-doped GaAs with atomically resolved scanning tunneling microscopy. Three types of defects were found: tellurium donors (TeAs), Ga vacancies (VGa), and Ga vacancy–donor complexes (VGa– TeAs). We show quantitatively that the compensation in Te-doped bulk GaAs is exclusively caused by vacancy– donor complexes in contrast to Si-doped GaA...

Resonant photodiffractive effect in semi - insulating multiple quantum wells

Received November 28, 1989; accepted April 10, 1990 We use semi-insulating multiple quantum wells to combine the holographic properties of the photorefractive effect with the large resonant optical nonlinearities of quantum-confined excitons. GaAs-AlGaAs multiplequantum-well structures are made semi-insulating by proton implantation. The implant damage produces defects that are available to tra...

Defect pairs and clusters related to the EL2 centre in GaAs

2014 In this article, we attempt to consistently interpret Deep Level Transient Spectroscopy (DLTS), Electron Paramagnetic Resonance (EPR) and electrical conductivity experimental data for irradiated GaAs. Our analysis reveals the occurrence of an irradiation-induced single donor mid-gap level (MG) related to the AsGa antisite defect. We give evidence that MG can be identified with the deep lev...